教师个人信息表
姓名 孙文红 性别
本人照片
出生年月   政治面貌
籍贯 河北 职称 教授
学历 博士研究生 学位 博士
联系电话 15931090677 邮政编码 530004
Email youzi7002@gxu.edu.cn
QQ 微信 wsun
通讯地址 广西大学物理科学与技术学院
所在学院 物理科学与工程技术学院 导师类型 校内导师
导师类别 博士后合作导师, 博士研究生导师, 硕士研究生导师
指导学科一
门类:理学 一级学科:物理学 二级学科:凝聚态物理
指导学科二
门类:理学 一级学科:物理学 二级学科:光学
学习和工作经历 学习经历
1984.9-1988.7, 兰州大学 物理系 学士
1988.9-1991.7, 兰州大学 物理系 硕士
1991.8-1996.7, 兰州大学 物理系 博士
工作经历:
2017.4-现在 广西大学物理技术与工程学院, 教授 (八桂学者)
2006.5-2017.3 Sensor Electronic Technology,Inc., 研发部主任
2002.3-2006.5 University of South Carolina, 副教授, Research Fellow
2000.8-2002.3 IMRE ( Singapore), Research Fellow
1991.9-1996.8 电子工业部第十三研究所, 高级工程师, 工程师
学术兼职
主讲课程
主要研究方向 宽禁带半导体材料与器件
主持(或参与)的主要科研项目 光电信息研究中心建设(T312009721-杰出人才,八桂学者配套专项)
八桂学者人才项目(T3120099202,自制区人才项目)
取得的主要成果 发表文章:

1.Max Shatalov, Wenhong Sun, Rakesh Jain, Alex Lunev, Xuhong Hu, Alex Dobrinsky, Yuri Bilenko, Jinwei Yang, Gregory Garrett, Michael Wraback,MichaelShur, and RemisGaska, “High Power AlGaNUltraviolet Light Emitters”, Semicond. Sci. Technol. 29, 084007( 2014).
2.M. Shatalov, W. Sun, A. Lunev, X. Hu, A. Dobrinsky, Y. Bilenko, J. Yang,M. Shur, R. Gaska, C. Moe, G. Garrett, M. Wraback, “AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%”, Appl. Phys. Express 5, 082101(2012).
3.W. Sun*, M. Shatalov, J. Deng, X. Hu, J. Yang, A. Lunev, Y. Bilenko,M. Shur, and R. Gaska, “Efficiency Droop in 245-247 nm AlGaN Light-Emitting Diodes with Continuous Wave 2 mW Output Power”, Appl. Phys. Lett. 96, 061102 (2010).
4.W. H. Sun*, J. P. Zhang, J. W. Yang, H. P. Maruska, M. A. Khan, R. Liu, and F. A. Ponce, “Fine Structure of AlN/AlGaNSuperlattice Grown by Pulse Atomic Layer Epitaxy for dislocation filtering”, Appl. Phys. Lett. 87, 211915(2005).
5.W. H. Sun*, J. W. Yang, J. P. Zhang, M. E. Gaevski , C. Q. Chen , J. W. Li, Z. Gong, M. Su, and M. Asif Khan, “n-Al 0.75 Ga0.25N Epilayers for 250nm Emission Ultraviolet Light Emitting Diodes”, Phys. Stat. Sol. (c) 2, 2083(2005).
6.W. H. Sun, J. P. Zhang, V. Adivarahan, A. Chitnis, M. Shatalov, S. Rai, S. WuV. Mandavilli, J. W. Yang, and M. A. Khan, “AlGaN Based 280nm Light-Emitting Diodes with continuous wave powers in excess of 1.5 mW”, Appl. Phys. Lett. 85, 531( 2004).
7.W. H. Sun, V. Adivarahan, M. Shatalov, Y. B. Lee, S. Wu, J. W. Yang, and M. A. Khan, “Continuous Wave Milliwatt Power AlGaN Light Emitting Diodes at 280nm”, JPN J. Appl. Phys.43, L1419(2004).
8.W. H. Sun*, J. W. Yang, C. Q. Chen, J. P. Zhang, M. E. Gaevski, E. Kuokstis, V. Adivarahan, H. M. Wang, Z. Gong, M. Su, and M. Asif Khan, “GaN/AlGaN multiple quantum wells on a-plane GaN pillars for stripe-geometry nonpolar ultraviolet light-emitting devices”, Appl. Phys. Lett. 83, 2599(2003).
9.W. H. Sun*, E. Kuokstis, M. Gaevski, J. P. Zhang, C. Q. Chen, H. M. Wang, J. W. Yang, G. Simin, M. Asif Khan, R. Gaska, and M. S. Shur, “Strong ultraviolet emission from non-polar AlGaN/GaN quantum wells grown over r-plane sapphire substrates”, Phys. Stat. Sol. (a) 200, 48(2003).
10.W. H. Sun*, S. J. Chua, L. S. Wang, and X. H. Zhang, “Outgoing multiphonon resonant Raman scattering and luminescence in Be- and C-implanted GaN”, J. Appl. Phys.91, 4917(2002).
11.W. H. Sun, J. C. Zhang, L. Dai, K. M. Chen, and G. G. Qin. “Gamma-ray irradiation effects on Fourier transform infrared grazing incidence reflection-absorption spectra of the GaN films”, J. Phys.: Condens. Matter.13, 5931(2001).
12.W. H. Sun, S. T. Wang, J. C. Zhang, K. M. Chen, G. G. Qin, Y. Z. Tong, Z. J. Yang, G. Y. Zhang, Y. M. Pu, Q. L. Zhang, "Formation and Dissolution of Microcrystalline Graphite in Carbon-Implanted GaN" J. Appl. Phys. 88, 5662(2000).
13.K. M. Chen, W. H. Sun*, K. Wu, C. Y. Li, and G. G. Qin, “Electrical Characteristics for Solid C60/n-GaNHeterojunctions”, J. Appl. Phys. 85, 6935 (1999).
14.W. H. Sun*, K. M. Chen, K. Wu, C.Y. Li, G. G. Qin, Q. L. Zhang, X. H. Zhou and Z. N. Gu, “Rectifying properties of solid C60/n-GaN, C70/n-GaN and C70/p-GaNheterojunctions”, Solid-State Electronics 44, 555(2000).
15.W. H. Sun, K. M. Chen, G. G. Qin et al. “Using Fourier Transform Infrared Grazing Incidence Reflectivity to Study Local Vibrational Modes in GaN”, J. Appl. Phys. 85, 6430(1999).

授权专利:
1.US9722139B2: “Non-Uniform Multiple Quantum Well Structure”, 2017.
2.US patent 2013/0193480:“Epitaxy Technique for Reducing Threading Dislocations in Stressed Semiconductor Compounds”, 2017.
3.US patent 9105792: “Patterned Layer Design for Group III Nitride Layer Growth”, 2015.
4.US patent 9831382B2: “Epitaxy Technique for Growing Semiconductor Compounds”, 2017.
5.US patent 9330906, “STRESS RELIEVING SEMICONDUCTOR LAYER”, 2016.
6. US patent 9537054B2 “SEMICONDUCTOR STRUCTURE WITH REDUCED BOWING AND INCREASED RELIABILITY”, 2017.


数据更新日期 2018-03-26 填报责任人 黄洁
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